TEMPERATURE-DEPENDENCE OF THE RADIATIVE RECOMBINATION COEFFICIENT IN GAAS-(AL,GA)AS QUANTUM WELLS

被引:25
作者
THOOFT, GW
LEYS, MR
TALENVANDERMHEEN, HJ
机构
关键词
D O I
10.1016/0749-6036(85)90092-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:307 / 310
页数:4
相关论文
共 6 条
[1]  
Garbuzov D. Z., 1980, Semiconductor optoelectronics, P305
[2]  
GARBUZOV DZ, 1978, SOV PHYS SEMICOND+, V12, P809
[3]  
LEYS MR, 1984, UNPUB J CRYST GROWTH, V68
[4]   GAIN-CURRENT RELATION FOR GAAS LASERS WITH N-TYPE AND UNDOPED ACTIVE LAYERS [J].
STERN, F .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :290-294
[5]  
Stern F, 1964, PHYS REV A, V133, P553
[6]   TEMPERATURE-DEPENDENCE OF INTERFACE RECOMBINATION AND RADIATIVE RECOMBINATION IN (AL, GA)AS HETEROSTRUCTURES [J].
THOOFT, GW ;
VANOPDORP, C .
APPLIED PHYSICS LETTERS, 1983, 42 (09) :813-815