MINORITY-CARRIER PROPERTIES OF GAAS ON SILICON

被引：21

作者：

AHRENKIEL, RK ^{[1
]}

ALJASSIM, MM ^{[1
]}

DUNLAVY, DJ ^{[1
]}

JONES, KM ^{[1
]}

VERNON, SM ^{[1
]}

TOBIN, SP ^{[1
]}

HAVEN, VE ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 03期

关键词：

D O I：

10.1063/1.100137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：222 / 224

页数：3

相关论文

共 10 条

[1] AHRENKIEL RK, IN PRESS SOL CELLS
[2] HIGH-PERFORMANCE SELF-ALIGNED GATE (AL,GA)AS/GAAS MODFETS ON MBE LAYERS GROWN ON (100) SILICON SUBSTRATES
ARCH, DK
MORKOC, H
VOLD, PJ
LONGERBONE, M
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 635 - 637
[3] FAN JCC, 1986, MATERIALS RES SOC S, V67
[4] PROPERTIES OF MODFETS GROWN ON SI SUBSTRATES AT DC AND MICROWAVE-FREQUENCIES
FISCHER, RJ
KOPP, WF
GEDYMIN, JS
MORKOC, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1407 - 1412
[5] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES
FISCHER, RJ
CHAND, N
KOPP, WF
PENG, CK
MORKOC, H
GLEASON, KR
SCHEITLIN, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 206 - 213
[6] 14.5-PERCENT CONVERSION EFFICIENCY GAAS SOLAR-CELL FABRICATED ON SI SUBSTRATES
ITOH, Y
NISHIOKA, T
YAMAMOTO, A
YAMAGUCHI, M
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (23) : 1614 - 1616
[7] KROEMER HB, 1986, P MATER RES SOC, V67, P3
[8] LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF DEVICE QUALITY GAAS DIRECTLY ON (100) SI
SHASTRY, SK
ZEMON, S
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (08) : 467 - 469
[9] DETERMINATION OF BULK MINORITY-CARRIER LIFETIME AND SURFACE-INTERFACE RECOMBINATION VELOCITY FROM PHOTOLUMINESCENCE DECAY OF A SEMI-INFINITE SEMICONDUCTOR SLAB
THOOFT, GW
VANOPDORP, C
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1065 - 1070
[10] VERNON S, 1987, MAT RES SOC S P, V91, P187