PROPERTIES OF MODFETS GROWN ON SI SUBSTRATES AT DC AND MICROWAVE-FREQUENCIES

被引：24

作者：

FISCHER, RJ ^{[1
]}

KOPP, WF ^{[1
]}

GEDYMIN, JS ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,HIGH SPEED DEVICE LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1109/T-ED.1986.22687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1407 / 1412

页数：6

共 11 条

[1] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J].

FISCHER, R ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

KOPP, W ;

MORKOC, H ;

LITTON, CW .

ELECTRONICS LETTERS, 1984, 20 (22) :945-947

[2] MONOLITHIC INTEGRATION OF GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND N-METAL-OXIDE-SEMICONDUCTOR SILICON CIRCUITS [J].

FISCHER, R ;

HENDERSON, T ;

KLEM, J ;

KOPP, W ;

PENG, CK ;

MORKOC, H ;

DETRY, J ;

BLACKSTONE, SC .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :983-985

[3] ON THE COLLAPSE OF DRAIN I-V-CHARACTERISTICS IN MODULATION-DOPED FETS AT CRYOGENIC TEMPERATURES [J].

FISCHER, R ;

DRUMMOND, TJ ;

KLEM, J ;

KOPP, W ;

HENDERSON, TS ;

PERRACHIONE, D ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1028-1032

[4] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

CHAND, N ;

KOPP, W ;

MORKOC, H ;

ERICKSON, LP ;

YOUNGMAN, R .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :397-399

[5] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES [J].

FISCHER, RJ ;

CHAND, N ;

KOPP, WF ;

PENG, CK ;

MORKOC, H ;

GLEASON, KR ;

SCHEITLIN, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) :206-213

[6] LEED STUDY OF THE STEPPED SURFACE OF VICINAL SI(100) [J].

KAPLAN, R .

SURFACE SCIENCE, 1980, 93 (01) :145-158

[7] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

LANG, DV ;

LOGAN, RA .

PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639

[8] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

METZE, GM ;

CHOI, HK ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1107-1109

[9] STRUCTURAL-PROPERTIES OF GAAS ON SI AND GE SUBSTRATES [J].

NEUMANN, DA ;

ZHU, XM ;

ZABEL, H ;

HENDERSON, T ;

FISCHER, R ;

MASSELINK, WT ;

KLEM, J ;

PENG, CK ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :642-644

[10] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE [J].

NONAKA, T ;

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12) :L919-L921

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