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LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF DEVICE QUALITY GAAS DIRECTLY ON (100) SI
被引:19
作者
:
SHASTRY, SK
论文数:
0
引用数:
0
h-index:
0
SHASTRY, SK
ZEMON, S
论文数:
0
引用数:
0
h-index:
0
ZEMON, S
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1986年
/ 49卷
/ 08期
关键词
:
D O I
:
10.1063/1.97118
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:467 / 469
页数:3
相关论文
共 18 条
[1]
GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD
AKIYAMA, M
论文数:
0
引用数:
0
h-index:
0
AKIYAMA, M
KAWARADA, Y
论文数:
0
引用数:
0
h-index:
0
KAWARADA, Y
KAMINISHI, K
论文数:
0
引用数:
0
h-index:
0
KAMINISHI, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1984,
23
(11):
: L843
-
L845
[2]
ORIENTED GROWTH OF SEMICONDUCTORS .3. GROWTH OF GALLIUM ARSENIDE ON GERMANIUM
BOBB, LC
论文数:
0
引用数:
0
h-index:
0
BOBB, LC
HOLLOWAY, H
论文数:
0
引用数:
0
h-index:
0
HOLLOWAY, H
MAXWELL, KH
论文数:
0
引用数:
0
h-index:
0
MAXWELL, KH
ZIMMERMAN, E
论文数:
0
引用数:
0
h-index:
0
ZIMMERMAN, E
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(13)
: 4687
-
+
[3]
LOW-TEMPERATURE EPITAXIAL-GROWTH OF GAAS ON (100) SILICON SUBSTRATES
CHRISTOU, A
论文数:
0
引用数:
0
h-index:
0
机构:
US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA
CHRISTOU, A
WILKINS, BR
论文数:
0
引用数:
0
h-index:
0
机构:
US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA
WILKINS, BR
TSENG, WF
论文数:
0
引用数:
0
h-index:
0
机构:
US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA
TSENG, WF
[J].
ELECTRONICS LETTERS,
1985,
21
(09)
: 406
-
408
[4]
GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
FISCHER, R
MASSELINK, WT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
MASSELINK, WT
KLEM, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
KLEM, J
HENDERSON, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
HENDERSON, T
MCGLINN, TC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
MCGLINN, TC
KLEIN, MV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
KLEIN, MV
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
MORKOC, H
MAZUR, JH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
MAZUR, JH
WASHBURN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
WASHBURN, J
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(01)
: 374
-
381
[5]
GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES
FLETCHER, RM
论文数:
0
引用数:
0
h-index:
0
FLETCHER, RM
WAGNER, DK
论文数:
0
引用数:
0
h-index:
0
WAGNER, DK
BALLANTYNE, JM
论文数:
0
引用数:
0
h-index:
0
BALLANTYNE, JM
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(10)
: 967
-
969
[6]
POLAR HETEROJUNCTION INTERFACES
HARRISON, WA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
HARRISON, WA
KRAUT, EA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
KRAUT, EA
WALDROP, JR
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
WALDROP, JR
GRANT, RW
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
GRANT, RW
[J].
PHYSICAL REVIEW B,
1978,
18
(08):
: 4402
-
4410
[7]
HETERO-EPITAXIAL GROWTH OF GALLIUM-PHOSPHIDE ON SILICON
KATODA, T
论文数:
0
引用数:
0
h-index:
0
KATODA, T
KISHI, M
论文数:
0
引用数:
0
h-index:
0
KISHI, M
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(04)
: 783
-
796
[8]
METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
METZE, GM
论文数:
0
引用数:
0
h-index:
0
METZE, GM
CHOI, HK
论文数:
0
引用数:
0
h-index:
0
CHOI, HK
TSAUR, BY
论文数:
0
引用数:
0
h-index:
0
TSAUR, BY
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(10)
: 1107
-
1109
[9]
ANTIPHASE DOMAIN-STRUCTURES IN GAP AND GAAS EPITAXIAL LAYERS GROWN ON SI AND GE
MORIZANE, K
论文数:
0
引用数:
0
h-index:
0
机构:
SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA,JAPAN
SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA,JAPAN
MORIZANE, K
[J].
JOURNAL OF CRYSTAL GROWTH,
1977,
38
(02)
: 249
-
254
[10]
REDUCED PRESSURE MOVPE GROWTH AND CHARACTERIZATION OF GAAS/GAALAS HETEROSTRUCTURES USING A TRIETHYLGALLIUM SOURCE
NORRIS, P
论文数:
0
引用数:
0
h-index:
0
NORRIS, P
BLACK, J
论文数:
0
引用数:
0
h-index:
0
BLACK, J
ZEMON, S
论文数:
0
引用数:
0
h-index:
0
ZEMON, S
LAMBERT, G
论文数:
0
引用数:
0
h-index:
0
LAMBERT, G
[J].
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
: 437
-
444
←
1
2
→
共 18 条
[1]
GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD
AKIYAMA, M
论文数:
0
引用数:
0
h-index:
0
AKIYAMA, M
KAWARADA, Y
论文数:
0
引用数:
0
h-index:
0
KAWARADA, Y
KAMINISHI, K
论文数:
0
引用数:
0
h-index:
0
KAMINISHI, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1984,
23
(11):
: L843
-
L845
[2]
ORIENTED GROWTH OF SEMICONDUCTORS .3. GROWTH OF GALLIUM ARSENIDE ON GERMANIUM
BOBB, LC
论文数:
0
引用数:
0
h-index:
0
BOBB, LC
HOLLOWAY, H
论文数:
0
引用数:
0
h-index:
0
HOLLOWAY, H
MAXWELL, KH
论文数:
0
引用数:
0
h-index:
0
MAXWELL, KH
ZIMMERMAN, E
论文数:
0
引用数:
0
h-index:
0
ZIMMERMAN, E
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(13)
: 4687
-
+
[3]
LOW-TEMPERATURE EPITAXIAL-GROWTH OF GAAS ON (100) SILICON SUBSTRATES
CHRISTOU, A
论文数:
0
引用数:
0
h-index:
0
机构:
US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA
CHRISTOU, A
WILKINS, BR
论文数:
0
引用数:
0
h-index:
0
机构:
US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA
WILKINS, BR
TSENG, WF
论文数:
0
引用数:
0
h-index:
0
机构:
US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA
TSENG, WF
[J].
ELECTRONICS LETTERS,
1985,
21
(09)
: 406
-
408
[4]
GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
FISCHER, R
MASSELINK, WT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
MASSELINK, WT
KLEM, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
KLEM, J
HENDERSON, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
HENDERSON, T
MCGLINN, TC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
MCGLINN, TC
KLEIN, MV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
KLEIN, MV
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
MORKOC, H
MAZUR, JH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
MAZUR, JH
WASHBURN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
WASHBURN, J
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(01)
: 374
-
381
[5]
GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES
FLETCHER, RM
论文数:
0
引用数:
0
h-index:
0
FLETCHER, RM
WAGNER, DK
论文数:
0
引用数:
0
h-index:
0
WAGNER, DK
BALLANTYNE, JM
论文数:
0
引用数:
0
h-index:
0
BALLANTYNE, JM
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(10)
: 967
-
969
[6]
POLAR HETEROJUNCTION INTERFACES
HARRISON, WA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
HARRISON, WA
KRAUT, EA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
KRAUT, EA
WALDROP, JR
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
WALDROP, JR
GRANT, RW
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
GRANT, RW
[J].
PHYSICAL REVIEW B,
1978,
18
(08):
: 4402
-
4410
[7]
HETERO-EPITAXIAL GROWTH OF GALLIUM-PHOSPHIDE ON SILICON
KATODA, T
论文数:
0
引用数:
0
h-index:
0
KATODA, T
KISHI, M
论文数:
0
引用数:
0
h-index:
0
KISHI, M
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(04)
: 783
-
796
[8]
METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
METZE, GM
论文数:
0
引用数:
0
h-index:
0
METZE, GM
CHOI, HK
论文数:
0
引用数:
0
h-index:
0
CHOI, HK
TSAUR, BY
论文数:
0
引用数:
0
h-index:
0
TSAUR, BY
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(10)
: 1107
-
1109
[9]
ANTIPHASE DOMAIN-STRUCTURES IN GAP AND GAAS EPITAXIAL LAYERS GROWN ON SI AND GE
MORIZANE, K
论文数:
0
引用数:
0
h-index:
0
机构:
SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA,JAPAN
SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA,JAPAN
MORIZANE, K
[J].
JOURNAL OF CRYSTAL GROWTH,
1977,
38
(02)
: 249
-
254
[10]
REDUCED PRESSURE MOVPE GROWTH AND CHARACTERIZATION OF GAAS/GAALAS HETEROSTRUCTURES USING A TRIETHYLGALLIUM SOURCE
NORRIS, P
论文数:
0
引用数:
0
h-index:
0
NORRIS, P
BLACK, J
论文数:
0
引用数:
0
h-index:
0
BLACK, J
ZEMON, S
论文数:
0
引用数:
0
h-index:
0
ZEMON, S
LAMBERT, G
论文数:
0
引用数:
0
h-index:
0
LAMBERT, G
[J].
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
: 437
-
444
←
1
2
→