14.5-PERCENT CONVERSION EFFICIENCY GAAS SOLAR-CELL FABRICATED ON SI SUBSTRATES

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[3] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1223 - 1225

[4] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171

[5] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1107 - 1109

[6] Nakanishi T., 1985, J CRYST GROWTH, V55, P4578

[7] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 413 - 414

[8] GAAS LIGHT-EMITTING-DIODES FABRICATED ON SIO2/SI WAFERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L450 - L451

[9] TSAUR BY, 1984, 17TH P IEEE PV C, P440

[10] CHANGES IN THE ELECTRICAL-PROPERTIES OF GAAS DUE TO ELECTRON-IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 604 - 606

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[3] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1223 - 1225

[4] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171

[5] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1107 - 1109

[6] Nakanishi T., 1985, J CRYST GROWTH, V55, P4578

[7] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 413 - 414

[8] GAAS LIGHT-EMITTING-DIODES FABRICATED ON SIO2/SI WAFERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L450 - L451

[9] TSAUR BY, 1984, 17TH P IEEE PV C, P440

[10] CHANGES IN THE ELECTRICAL-PROPERTIES OF GAAS DUE TO ELECTRON-IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 604 - 606