Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells

被引：63

作者：

Cheng, B ^{[1
]}

Roy, S ^{[1
]}

Roy, G ^{[1
]}

Adamu-Lema, F ^{[1
]}

Asenov, A ^{[1
]}

机构：

[1] Univ Glasgow, Device Modelling Grp, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 05期

关键词：

intrinsic parameter fluctuation; static noise margin; statistical compact model parameter extraction;

D O I：

10.1016/j.sse.2004.09.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An 'atomistic' circuit simulation methodology is developed to investigate intrinsic parameter fluctuations introduced by discreteness of charge and matter in decananometer scale MOSFET circuits. Based on the 'real' doping profile, the impact of random device doping on 6-T SRAM static noise margins are discussed in detail for 35 nm physical gate length devices. We conclude that SRAM may not gain all the benefits Of future bulk CMOS scaling, and new device architectures are needed to scale SRAM down to future technology node. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：740 / 746

页数：7

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