Thin film polycrystalline silicon solar cell on ceramics with a seeding layer formed via aluminium-induced crystallisation of amorphous silicon

被引:6
作者
Ornaghi, C
Stöger, M
Beaucarne, G
Poortmans, J
Schattschneider, P
机构
[1] IMEC VZW, B-3001 Louvain, Belgium
[2] Vienna Tech Univ, A-1040 Vienna, Austria
来源
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 2003年 / 150卷 / 04期
关键词
D O I
10.1049/ip-cds:20030630
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin film polycrystalline silicon solar cells on foreign substrates are viewed as one of the most promising approaches to cost reduction in photovoltaics. To enhance the quality of the film, the use of 'seeding layers' prior to deposition of active material is being investigated. It has been shown that a phenomenon, suitable to create such a seeding layer is the aluminium-induced crystallisation of amorphous silicon. Previous work mainly considered glass as the substrate of choice, thereby introducing limitations on the deposition temperature. Results concerning the application of such a technique to ceramic substrates (allowing the use of high-temperature CVD) are described. Also, the first reported results of a solar cell made in silicon deposited on these seeding layers are presented.
引用
收藏
页码:287 / 292
页数:6
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