Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

被引：245

作者：

Seo, Kyungah ^{[1
]}

Kim, Insung ^{[2
]}

Jung, Seungjae ^{[2
]}

Jo, Minseok ^{[2
]}

Park, Sangsu ^{[1
]}

Park, Jubong ^{[2
]}

Shin, Jungho ^{[2
]}

Biju, Kuyyadi P. ^{[2
]}

Kong, Jaemin ^{[2
]}

Lee, Kwanghee ^{[1
,2
,3
]}

Lee, Byounghun ^{[1
,2
]}

Hwang, Hyunsang ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[3] Gwangju Inst Sci & Technol, Heeger Ctr Adv Mat, Kwangju 500712, South Korea

来源：

NANOTECHNOLOGY | 2011年 / 22卷 / 25期

关键词：

NEURONS; MODEL;

D O I：

10.1088/0957-4484/22/25/254023

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.

引用

页数：5

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