Adsorption of 1-octanethiol on the GaN(0001) surface

被引：33

作者：

Bermudez, VM ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

LANGMUIR | 2003年 / 19卷 / 17期

关键词：

D O I：

10.1021/la030032a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The chemisorption of 1-octanethiol [CH3(CH2)(6)CH2SH] from the vapor phase on the GaN(0001)-(1 x 1) surface has been studied using X-ray photoemission, ultraviolet photoemission, and X-ray-excited Auger electron spectroscopies. Quantitative analysis of relative peak intensities indicates that the molecule adsorbs via the thiol group with a saturation coverage of similar to0.28 monolayers and with the alkyl chain lying essentially parallel to the surface. Upon annealing, most of the alkyl C desorbs by similar to350 degreesC, but most of the S remains. Little or no indication of X-ray-induced damage in the adsorbed thiol layer is seen during data collection.

引用

页码：6813 / 6819

页数：7

共 53 条

[51] Formation and structure of self-assembled monolayers [J].