Organic light-emitting devices with silicon anodes

被引：26

作者：

Huang, CJ ^{[1
]}

Han, S ^{[1
]}

Grozea, D ^{[1
]}

Turak, A ^{[1
]}

Lu, ZH ^{[1
]}

机构：

[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 08期

关键词：

D O I：

10.1063/1.1877812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Both n and p-type Si(100) surfaces, treated by various methods, have been investigated as electrodes for hole injection in organic light-emitting devices. It was found that the Fermi level of silicon dictates the device characteristics. The surface Fermi level, which can be varied by doping and surface states, has been found to be a good reference level for controlling the hole injection barrier. (C) 2005 American Institute of Physics.

引用

页数：3

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