Formation of two-dimensional electron gas and the magnetotransport behavior of ZnMnO/ZnO heterostructure

被引：49

作者：

Edahiro, T ^{[1
]}

Fujimura, N ^{[1
]}

Ito, T ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Sch Engn, Osaka 5998531, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.1558612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO based heterostructure, which contains magnetic impurities in the barrier layer, is grown on c-cut sapphire substrate by pulsed laser deposition. The temperature dependence of the mobility of the Zn0.9Mn0.1O/ZnO heterostructure exhibits the suppression of ionized impurity scattering below 100 K. The carrier concentration and the mobility measured at 1.85 K are 4.0x10(12) l/cm(2) and 360 cm(2)/V s. Shubnikov-de Haas oscillations are clearly observed in longitudinal magnetoresistance above 3.7 T at the same temperature. These transport properties reveal that two-dimensional electron gas is successfully obtained at the Zn0.9Mn0.1O/ZnO interface. (C) 2003 American Institute of Physics.

引用

页码：7673 / 7675

页数：3

共 12 条

[11] Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy [J].