Tunneling transport and diffusion in weakly coupled quantum dot ensembles

被引:12
作者
Deppe, DG [1 ]
Deng, Q [1 ]
机构
[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
关键词
D O I
10.1063/1.122799
中图分类号
O59 [应用物理学];
学科分类号
摘要
The lateral tunneling rate and carrier diffusion in weakly coupled quantum dots are analyzed. In the weak coupling limit, localization of charge within a single dot is obtained through superposition of the lowest-energy eigenstates of coupled dots. The free evolution of the wave function leads to tunneling, but with a time dependence that includes dephasing. Idealized quantum dot boundary conditions are used to estimate tunneling times, and these are compared with recent experiments. (C) 1998 American Institute of Physics. [S0003-6951(98)00850-X].
引用
收藏
页码:3536 / 3538
页数:3
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