Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy

被引：30

作者：

Baklenov, O ^{[1
]}

Huffaker, DL ^{[1
]}

Anselm, A ^{[1
]}

Deppe, DG ^{[1
]}

Streetman, BG ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 12期

关键词：

D O I：

10.1063/1.366530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the dependence of Al content on the formation of InAlGaAs quantum dots grown by strained-layer molecular beam epitaxy. Atomic force microscopy and reflection high-energy electron diffraction patterns show that the addition of Al both slows the formation of the quantum dots in the brief time following layer deposition, and results in smaller dots of higher density. The effects might be qualitatively explained by reduced surface migration of the column III atoms due to the stronger Al bond strength. (C) 1997 American Institute of Physics.

引用

页码：6362 / 6364

页数：3

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