SURFACE MIGRATION OF GA AND AL ATOMS ON (100) GAAS AND ALAS DURING MIGRATION-ENHANCED EPITAXY

被引：14

作者：

HORIKOSHI, Y

YAMAGUCHI, H

KAWASHIMA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1989年 / 28卷 / 08期

关键词：

D O I：

10.1143/JJAP.28.1307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1307 / 1311

页数：5

共 9 条

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