REDUCTION OF DEEP LEVEL CONCENTRATIONS IN GAAS-LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY

被引：4

作者：

MAKIMOTO, T ^{[1
]}

YAMAUCHI, Y ^{[1
]}

HORIKOSHI, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, BASIC RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 02期

关键词：

D O I：

10.1143/JJAP.27.L152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L152 / L154

页数：3

共 12 条

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[3]

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[9] DEEP ELECTRON TRAPS IN ORGANOMETALLIC VAPOR-PHASE GROWN ALXGA1-XAS [J].

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[10] EFFECTS OF THE GROWTH-CONDITIONS ON DEEP LEVEL CONCENTRATION IN MOCVD GAAS [J].

WATANABE, MO ;

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ZOHTA, Y .

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