DEEP ELECTRON TRAPS IN ORGANOMETALLIC VAPOR-PHASE GROWN ALXGA1-XAS

被引：50

作者：

WAGNER, EE

MARS, DE

HOM, G

STRINGFELLOW, GB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 10期

关键词：

D O I：

10.1063/1.327498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5434 / 5437

页数：4

共 17 条

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[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

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[6]

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[9] STUDY OF ELECTRON TRAPS IN VAPOR-PHASE EPITAXIAL GAAS [J].

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[10] ELECTRON-MOBILITY IN ALXGA1-XAS [J].

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