Low-threshold continuous-wave operation of an oxide-confined vertical cavity surface emitting laser based on a quantum dot active region and half-wave cavity

被引：15

作者：

Huffaker, DL

Graham, LA

Deppe, DG

机构：

[1] Microelectronics Research Center, Dept. of Elec. and Comp. Engineering, University of Texas at Austin, Austin

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 14期

关键词：

vertical cavity surface emitting lasers; lasers;

D O I：

10.1049/el:19970825

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented on vertical cavity surface emitting lasers that use an InGaAlAs quantum dot active region and oxide-confinement. Continuous-wave room temperature operation is achieved at a wavelength of 9510 Angstrom with a threshold current of 235 mu A for a 7 mu m square oxide aperture. Electroluminescence from similar active regions without a cavity shows that lasing occurs on the three-dimensionally confined quantum dot electronic states.

引用

页码：1225 / 1226

页数：2

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