Sub-40 mu A continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors

被引:76
作者
Huffaker, DL
Graham, LA
Deng, H
Deppe, DG
机构
[1] Microelectronics Research Center, Dept. of Elec. and Comp. Engineering, University of Texas at Austin, Austin
关键词
D O I
10.1109/68.508708
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Due to two improvements in cavity design, low-threshold lasing is achieved in oxidized vertical-cavity surface-emitting lasers incorporating upper dielectric distributed Bragg reflectors. Intracavity absorption is reduced by removal of a heavily p-type contact layer and the use of a low-loss MgF-ZnSe upper mirror. We report sub-100 mu A lasing for a 7-mu m diameter device, and sub-40 mu A lasing for a 3-mu m diameter device. The low-loss cavity design also allows for highly multimode operation at a low-bias current of 600 mu A in a detuned cavity.
引用
收藏
页码:974 / 976
页数:3
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