Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture

被引：75

作者：

Huffaker, DL

Baklenov, O

Graham, LA

Streetman, BG

Deppe, DG

机构：

[1] Dept. of Elec. and Comp. Engineering, Microelectronics Research Center, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 18期

关键词：

OXIDATION;

D O I：

10.1063/1.118872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on an oxide-confined vertical-cavity surface-emitting laser that uses a quantum dot active region. The laser is grown by molecular beam epitaxy, with the quantum dot active region formed from a five monolayer deposition of In0.50Ga0.35Al0.15As. Lasing occurs at wavelengths corresponding to quantum dot transitions, with a room temperature pulsed threshold as low as 560 mu A for a 7 mu m diameter oxide aperture. (C) 1997 American Institute of Physics.

引用

页码：2356 / 2358

页数：3

共 16 条

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