Atomic structure of the Ge(15 3 23) surface

被引:36
作者
Gai, Z [1 ]
Li, XW
Zhao, RG
Yang, WS
机构
[1] Beijing Univ, Mesoscop Phys Lab, Beijing 100871, Peoples R China
[2] Beijing Univ, Dept Phys, Beijing 100871, Peoples R China
关键词
D O I
10.1103/PhysRevB.57.R15060
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a stable germanium surface (15 3 23), which among all known stable germanium as well as silicon surfaces is the only one inside the unit stereographic triangle and has the highest indices. On the basis of high-resolution dual-bias scanning tunneling microscope images, a detailed model has been proposed for it for further investigation. The surface does not consist of nanometer facets of any other stable surfaces while some unstable surfaces, such as (102), may facet to including {15 3 23} facets, and thus is also a major stable surface, the same as (001), (111), (113). etc.
引用
收藏
页码:15060 / 15063
页数:4
相关论文
共 19 条
  • [1] A STABLE HIGH-INDEX SURFACE OF SILICON - SI(5 5 12)
    BASKI, AA
    ERWIN, SC
    WHITMAN, LJ
    [J]. SCIENCE, 1995, 269 (5230) : 1556 - 1560
  • [2] QUASI-PERIODIC NANOSCALE FACETING OF HIGH-INDEX SI SURFACES
    BASKI, AA
    WHITMAN, LJ
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (06) : 956 - 959
  • [3] ATOMIC-STRUCTURE OF CLEAN SI(113) SURFACES - THEORY AND EXPERIMENT
    DABROWSKI, J
    MUSSIG, HJ
    WOLFF, G
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (12) : 1660 - 1663
  • [4] Structure and stability of Si(114)-(2x1)
    Erwin, SC
    Baski, AA
    Whitman, LJ
    [J]. PHYSICAL REVIEW LETTERS, 1996, 77 (04) : 687 - 690
  • [5] Atomic structure of the Ge(101) surface
    Gai, Z
    Zhao, RG
    Yang, WS
    [J]. PHYSICAL REVIEW B, 1998, 57 (12): : R6795 - R6798
  • [6] Atomic structure of high-index Ge surfaces consisting of periodic nanoscale facets
    Gai, Z
    Zhao, RG
    Ji, H
    Li, XW
    Yang, WS
    [J]. PHYSICAL REVIEW B, 1997, 56 (19): : 12308 - 12315
  • [7] Surface structure of the (3x1) and (3x2) reconstructions of Ge(113)
    Gai, Z
    Ji, H
    Gao, B
    Zhao, RG
    Yang, WS
    [J]. PHYSICAL REVIEW B, 1996, 54 (12) : 8593 - 8599
  • [8] Gai Zheng, unpublished
  • [9] SURFACES OF SILICON
    HANEMAN, D
    [J]. REPORTS ON PROGRESS IN PHYSICS, 1987, 50 (08) : 1045 - 1086
  • [10] CHEMICAL TITRATION OF CLEAN SILICON SURFACES WITH N2O AND O2 - ATOMIC NATURE OF 5X1 RECONSTRUCTED SI(110)
    KEIM, EG
    WORMEESTER, H
    VANSILFHOUT, A
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 2747 - 2754