共 42 条
- [1] ATOMIC CONFIGURATION OF HYDROGENATED AND CLEAN SI(110) SURFACES [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2329 - 2335
- [2] TUNNELING MICROSCOPY OF SILICON AND GERMANIUM - SI(111) 7X7, SNGE(111) 7X7, GESI(111) 5X5, SI(111) 9X9, GE(111) 2X8, GE(100) 2X1, SI(110) 5X1 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 472 - 477
- [4] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2074 - 2082
- [5] Cricenti A, 1996, J VAC SCI TECHNOL A, V14, P2448, DOI 10.1116/1.580035
- [7] Atomic structure of high-index Ge surfaces consisting of periodic nanoscale facets [J]. PHYSICAL REVIEW B, 1997, 56 (19): : 12308 - 12315
- [8] Adatom diffusion on Ge(111) and the corresponding activation energy barrier [J]. PHYSICAL REVIEW B, 1996, 53 (20): : 13547 - 13550
- [9] Migration of subsurface self-interstitial atoms of the Ge(113) surface and the energy barrier [J]. PHYSICAL REVIEW B, 1997, 56 (19): : 12303 - 12307
- [10] Surface structure of the (3x1) and (3x2) reconstructions of Ge(113) [J]. PHYSICAL REVIEW B, 1996, 54 (12) : 8593 - 8599