Passively Q-Switched Nd:GdVO4 1.3 μm Laser with Few-Layered Black Phosphorus Saturable Absorber

被引：44

作者：

Sun, Xiaoli ^{[1
]}

Nie, Hongkun ^{[1
]}

He, Jingliang ^{[1
]}

Zhao, Ruwei ^{[1
]}

Su, Xiancui ^{[1
]}

Wang, Yiran ^{[1
]}

Zhang, Baitao ^{[1
]}

Wang, Ruihua ^{[1
]}

Yang, Kejian ^{[2
]}

机构：

[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China

[2] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Shandong, Peoples R China

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2018年 / 24卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Black phosphorus; 1.3 mu m; Short pulses; MODE-LOCKING; ND-GDVO4; LASER; SEMICONDUCTOR; ABSORPTION; GRAPHENE;

D O I：

10.1109/JSTQE.2017.2766979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

Byusing a few-layer black phosphorus (BP) as the saturable absorber (SA), a laser-diode end-pumped stable Q-switched Nd:GdVO4 laser operating at 1.3 mu m was realized. A maximum average output power of 452 mW was obtained at 2.22 W absorbed pump power, corresponding to a 34.5% slope efficiency. The shortest pulse width, highest pulse repetition rate, and largest peak power were determined to be 72 ns, 625 kHz, and 10.04 W, respectively. To the best of our knowledge, this pulse duration was the shortest ever reported for passive Q-switched bulk lasers based on two-dimensional materials at 1.3 mu m. Results suggested that BP can be used to achieve short laser pulses with high repetition rate at 1.3 mu m spectral region.

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页数：5

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