Electric conduction in oriented polysilane films

被引：16

作者：

Nakayama, Y ^{[1
]}

Hirooka, K ^{[1
]}

West, R ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT CHEM,MADISON,WI 53706

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 11期

关键词：

polymers; electric transport; order-disorder effects; tunnelling;

D O I：

10.1016/S0038-1098(96)00510-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An anisotropically electric conduction has been investigated for highly oriented poly(cyclohexylmethylsilane) films. The carrier mobility is enhanced by about one order of magnitude when polysilanes align along the transport path and suppressed by more than one order of magnitude when polysilanes align perpendicular to the transport path, as compared with randomly oriented films. This change is explained, by taking account of the imperfect orientation, within a frame of a model of charge hopping through domainlike sigma-conjugated segments of the silicon chain. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：759 / 762

页数：4

共 16 条

[1] COMMON FEATURES IN THE ELECTRONIC TRANSPORT BEHAVIOR OF DIVERSE GLASSY SOLIDS [J].