Thin films of bismuth vanadates with modifiable conduction properties

被引:36
作者
Barreca, D
Depero, LE
Di Noto, V
Rizzi, GA
Sangaletti, L
Tondello, E
机构
[1] Univ Padua, Dipartimento Chim Inorgan Metallorgan & Analit, CNR, Ctr Studio Stabil & Reatt Composti Coordinaz, I-35131 Padua, Italy
[2] Univ Brescia, Dipartimento Chim & Fis Mat, I-25123 Brescia, Italy
关键词
D O I
10.1021/cm980725q
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thin films of bismuth vanadates are deposited by chemical vapor deposition (OVD) on alpha-Al2O3 substrates using an O-2 atmosphere and vanadyl(IV) acetylacetonate and triphenyl-bismuth as precursors. The microstructure of the samples is studied by XRD and Raman spectroscopy and their chemical composition is investigated by XPS and SIMS. AFM is used to analyze the surface morphology of the samples. All the samples show a nonohmic behavior beyond a threshold voltage, V-th, which is linearly dependent on the V4+/V5+ ratio. Impedance spectroscopy measurements indicate that the obtained samples are oxide ion conductors at room temperature and that the mechanism of ion conduction occurs by means of hopping between vacancies. Furthermore, ferroelectric-paraelectric transitions take place in the materials at low temperatures.
引用
收藏
页码:255 / 261
页数:7
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