On new mixed conductors of Bi4V2-xMnxO11-delta formulation

被引:17
作者
Alga, M
Wahbi, M
Ammar, A
Tanouti, B
Grenier, JC
Reau, JM
机构
[1] UNIV CADI AYYAD,FAC SCI SEMLALIA,DEPT CHIM,LAB CHIM SOLIDE MINERAL,MARRAKECH,MOROCCO
[2] INST CHIM MAT CONDENSEE BORDEAUX,F-33608 PESSAC,FRANCE
关键词
bismuth-vanadium oxides; Mn substitution; electrical properties; ionic conduction;
D O I
10.1016/S0925-8388(96)03106-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The partial substitution of manganese for vanadium in the perovskite-like sheets of Bi4V2O11 has allowed to stabilize at room temperature the structure of gamma-Bi4V2O11 for 0.15 less than or equal to x less than or equal to 0.50. Magnetic measurements have shown that the manganese offers simultaneously the +III and +IV oxidation states. It results that the materials prepared can be formulated: Bi4V2-xMx-y3+Mny4+O11-x+y/2 (delta=x-y/2). Study of electrical properties has revealed the presence of a mixed contribution, at the same time electronic and ionic, in these materials. The conductivity of the (x=0.20) composition is mainly ionic and its value locates this material among the best ionic conductors or gamma-Bi4V2O11 structural type. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:234 / 243
页数:10
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