On new mixed conductors of Bi4V2-xMnxO11-delta formulation

被引：17

作者：

Alga, M

Wahbi, M

Ammar, A

Tanouti, B

Grenier, JC

Reau, JM

机构：

[1] UNIV CADI AYYAD,FAC SCI SEMLALIA,DEPT CHIM,LAB CHIM SOLIDE MINERAL,MARRAKECH,MOROCCO

[2] INST CHIM MAT CONDENSEE BORDEAUX,F-33608 PESSAC,FRANCE

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1997年 / 256卷 / 1-2期

关键词：

bismuth-vanadium oxides; Mn substitution; electrical properties; ionic conduction;

D O I：

10.1016/S0925-8388(96)03106-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The partial substitution of manganese for vanadium in the perovskite-like sheets of Bi4V2O11 has allowed to stabilize at room temperature the structure of gamma-Bi4V2O11 for 0.15 less than or equal to x less than or equal to 0.50. Magnetic measurements have shown that the manganese offers simultaneously the +III and +IV oxidation states. It results that the materials prepared can be formulated: Bi4V2-xMx-y3+Mny4+O11-x+y/2 (delta=x-y/2). Study of electrical properties has revealed the presence of a mixed contribution, at the same time electronic and ionic, in these materials. The conductivity of the (x=0.20) composition is mainly ionic and its value locates this material among the best ionic conductors or gamma-Bi4V2O11 structural type. (C) 1997 Elsevier Science S.A.

引用

页码：234 / 243

页数：10

共 22 条

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