Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper

被引:247
作者
Figueiredo, V. [1 ,2 ]
Elangovan, E. [1 ,2 ]
Goncalves, G. [1 ,2 ]
Barquinha, P. [1 ,2 ]
Pereira, L. [1 ,2 ]
Franco, N. [3 ]
Alves, E. [3 ]
Martins, R. [1 ,2 ]
Fortunato, E. [1 ,2 ]
机构
[1] Univ Nova Lisboa, FCT,Dept Mat Sci, CENIMAT 13N, P-2829516 Caparica, Portugal
[2] Univ Nova Lisboa, FCT,CEMOP, P-2829516 Caparica, Portugal
[3] Inst Tecnol & Nucl, LFI, Dep Fis, P-2686953 Sacavem, Portugal
关键词
x-ray diffraction; physical vapor deposition processes; copper oxide thin films; oxides; semiconducting materials;
D O I
10.1016/j.apsusc.2007.12.019
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thin films of copper oxide were obtained through thermal oxidation (100-450 degrees C) of evaporated metallic copper (Cu) films on glass substrates. The X-ray diffraction (XRD) studies confirmed the cubic Cu phase of the as-deposited films. The films annealed at 100 degrees C showed mixed Cu-Cu2O phase, whereas those annealed between 200 and 300 degrees C showed a single cubic Cu2O phase. A single monoclinic CuO phase was obtained from the films annealed between 350 and 450 degrees C. The positive sign of the Hall coefficient confirmed the p-type conductivity in the films with Cu2O phase. However, a relatively poor crystallinity of these films limited the p-type characteristics. The films with Cu and CuO phases show n-type conductivity. The surface of the as-deposited is smooth (RMS roughness of 1.47 nm) and comprised of uniformly distributed grains (AFM and SEM analysis). The post-annealing is found to be effective on the distribution of grains and their sizes. The poor transmittance of the as-deposited films (<1%) is increased to a maximum of similar to 80% (800 nm) on annealing at 200 degrees C. The direct allowed band gap is varied between 2.03 and 3.02 eV. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:3949 / 3954
页数:6
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