Formation and manipulation of a metallic wire of single gold atoms

被引:933
作者
Yanson, AI
Bollinger, GR
van den Brom, HE
Agraït, N
van Ruitenbeek, JM
机构
[1] Leiden Univ, Kamerlingh Onnes Lab, NL-2300 RA Leiden, Netherlands
[2] Univ Autonoma Madrid, Inst Univ Ciencia Mat Nicolas Cabrera, Dept Fis Mat Condensada C III, Lab Bajas Temp, E-28049 Madrid, Spain
关键词
D O I
10.1038/27405
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The continuing miniaturization of microelectronics raises the prospect of nanometre-scale devices with mechanical and electrical properties that are qualitatively different from those at larger dimensions. The investigation of these properties, and particularly the increasing influence of quantum effects on electron transport, has therefore attracted much interest. Quantum properties of the conductance can be observed when 'breaking' a metallic contact: as two metal electrodes in contact with each other are slowly retracted, the contact area undergoes structural rearrangements until it consists in its final stages of only a few bridging atoms(1-3). Just before the abrupt transition to tunnelling occurs, the electrical conductance through a monovalent metal contact is always dose to a value of 2e(2)/h (approximate to 12.9 k Omega(-1)), where e is the charge on an electron and h is Planck's constant(4-6). This value corresponds to one quantum unit of conductance, thus indicating that the 'neck' of the contact consists of a single atom(7). In contrast to previous observations of only single-atom necks, here we describe the breaking of atomic-scale gold contacts, which leads to the formation of gold chains one atom thick and at least four atoms long. Once we start to pull out a chain, the conductance never exceeds 2e(2)/h, confirming that it acts as a one-dimensional quantized nanowire. Given their high stability and the ability to support ballistic electron transport, these structures seem well suited for the investigation of atomic-scale electronics.
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页码:783 / 785
页数:3
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