Simulation and optimization of diode and insulated gate bipolar transistor interaction in a chopper cell using MATLAB and Simulink

被引:28
作者
Bryant, Angus T. [1 ]
Palmer, Patrick R.
Santi, Enrico
Hudgins, Jerry L.
机构
[1] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England
[2] Univ Cambridge, Ctr Adv Photon & Elect, Dept Engn, Cambridge CB3 0FA, England
[3] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[4] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA
关键词
Circuit modeling; diode; insulated gate bipolar transistor (IGBT); MATLAB; optimization; physics-based semiconductor device models; power semiconductor modeling; simulation; Simulink;
D O I
10.1109/TIA.2007.900443
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, a simulation method for power electronic devices has emerged, which has high accuracy and short run times based on a Fourier model of the device physics. This paper describes the use of the Fourier models for diodes and insulated gate bipolar transistors (IGBTs) and implementation in MATLAB and Simulink in a formal optimization strategy. In particular, this paper investigates coupled circuit, diode, and IGBT behavior. Conclusions are drawn concerning device loading and circuit design, particularly the role of stray inductance.
引用
收藏
页码:874 / 883
页数:10
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