Characterization and modeling of high-voltage field-stop IGBTs

被引：62

作者：

Kang, XS

Caiafa, A

Santi, E

Hudgins, JL

Palmer, PR

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2003年 / 39卷 / 04期

关键词：

field-stop insulated gate bipolar transistor (FS IGBT); high voltage IGBT; physics-based power semiconductor models; power semiconductors modeling;

D O I：

10.1109/TIA.2003.814547

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The high-voltage field-stop (FS) insulated, gate bipolar transistor (IGBT) is a promising power device for high-power applications thanks to the robust characteristics offered by the FS technology, which combines the inherent advantages offered by punch-through and non-punch-through structures while overcoming the drawbacks of each structure. in this paper, an electrothermal physics-based model for the FS IGBT is developed. The model contains a detailed description of the FS layer and A is validated using experimental results for a commercial 1200-V/60-A FS IGBT over the entire temperature range specified in the data sheets. The validated model is then used to simulate a 6.5-kV FS IGBT. The simulation results are compared with experimental results published in the literature and good agreement is obtained.

引用

页码：922 / 928

页数：7

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