Low temperature characterization and modeling of IGBTs

被引：8

作者：

Kang, X ^{[1
]}

Caiafa, A ^{[1
]}

Santi, E ^{[1
]}

Hudgins, J ^{[1
]}

Palmer, PR ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

PESC'02: 2002 IEEE 33RD ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-4, CONFERENCE PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/PSEC.2002.1022352

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The turn-off switching characteristics and breakdown voltage of both punch-through (PT) and non-punch-through (NPT) IGBTs are examined over a temperature range of -125 to 100degreesC. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results from the model are compared to experimental waveforms and good agreement is found.

引用

页码：1277 / 1282

页数：6

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