Choosing a thermal model for electrothermal simulation of power semiconductor devices

被引:100
作者
Ammous, A [1 ]
Ghedira, S [1 ]
Allard, B [1 ]
Morel, H [1 ]
Renault, D [1 ]
机构
[1] Inst Natl Sci Appl Lyon, CEGELY, F-69621 Villeurbanne, France
关键词
finite difference method; finite-element method; large surges; thermal circuit networks; thermal model;
D O I
10.1109/63.750183
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 [电气工程]; 0809 [电子科学与技术];
摘要
The literature proposes some thermal models needed for the electrothermal simulation of power electronic systems, This paper gives a useful analysis about the choice of the thermal model circuit networks, equivalent to a discretization of the heat equation by the finite difference method (FDM) and the finite-element method (FEM), and an analytic model developed by applying an internal approximation of the heat diffusion problem, The effect of the boundary condition representation and the introduced errors on temperature response at the heat source are studied. This study is advantageous, particularly for large surges of a short time duration.
引用
收藏
页码:300 / 307
页数:8
相关论文
共 12 条
[1]
ALLARD B, IEEE P IMACS 96 LILL, P500
[2]
Transient temperature measurements and modeling of IGBT's under short circuit [J].
Ammous, A ;
Allard, B ;
Morel, H .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 1998, 13 (01) :12-25
[3]
*ANACAD EL ENG SOF, 1994, ELD HDL A US MAN
[4]
[Anonymous], AN292 MOT SEM PROD I
[5]
Clemente S., 1993, IEEE Transactions on Power Electronics, V8, P337, DOI 10.1109/63.261001
[6]
*DOLPH INT, 1996, SMASH ABCD LANG REF
[7]
THERMAL COMPONENT MODELS FOR ELECTROTHERMAL NETWORK SIMULATION [J].
HEFNER, AR ;
BLACKBURN, DL .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1994, 17 (03) :413-424
[8]
Hsu JT, 1996, IEEE T CIRCUITS-I, V43, P721
[9]
STATE-VARIABLE MODELING OF THE POWER PIN DIODE USING AN EXPLICIT APPROXIMATION OF SEMICONDUCTOR-DEVICE EQUATIONS - A NOVEL-APPROACH [J].
MOREL, H ;
GAMAL, SH ;
CHANTE, JP .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 1994, 9 (01) :112-120
[10]
SABER, 1996, MAST REFERENCE MANUA