Influence of deposition parameters on the properties of sputtered Ge2Sb2Te5 films

被引：30

作者：

Dieker, H ^{[1
]}

Wuttig, M ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany

来源：

THIN SOLID FILMS | 2005年 / 478卷 / 1-2期

关键词：

optical properties; sputtering; chalcogenide; phase change;

D O I：

10.1016/j.tsf.2004.08.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of deposition parameters such as the power applied to the target and the argon pressure during sputtering on the resulting properties of Ge2Sb2Te5 films has been investigated. Independent of deposition parameters all films deposited at room temperature were amorphous. Nevertheless X-ray reflectance showed a pronounced dependence of the rate upon the argon pressure in excellent agreement with the Keller-Simmons model. Furthermore, the film density also decreased with increasing argon pressure. This led to a corresponding change of the optical properties as revealed by spectroscopic ellipsometry. The crystallization temperature decreased with decreasing film density as revealed by measurements of the electrical resistivity. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：248 / 251

页数：4

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