Correlation between microstructure and optical properties of Ge2Sb2Te5 thin films

被引：21

作者：

Kim, JH ^{[1
]}

机构：

[1] LG Corp Inst Technol, Devices & Mat Lab, Seoul 137724, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 12期

关键词：

D O I：

10.1063/1.371725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure and optical properties of amorphous and crystalline Ge2Sb2Te5 thin films prepared under different sputtering conditions were investigated. The microstructure of amorphous films was modified by changing the sputtering Ar gas pressure during the deposition. The optical properties and the microstructure of the sample prepared at high Ar gas pressure were remarkably different from the samples prepared at low pressures. A strong correlation between the microstructure and optical properties of Ge2Sb2Te5 thin films was found. (C) 1999 American Institute of Physics. [S0021-8979(99)01624-2].

引用

页码：6770 / 6772

页数：3

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