Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes

被引：339

作者：

Bergman, JP ^{[1
]}

Lendenmann, H ^{[1
]}

Nilsson, PÅ ^{[1
]}

Lindefelt, U ^{[1
]}

Skytt, P ^{[1
]}

机构：

[1] ABB Corp Res, SE-72178 Vasteras, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

device stability; dislocation; stacking fault; synchrotron topography;

D O I：

10.4028/www.scientific.net/MSF.353-356.299

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed a material study of 4H SiC PN diodes after they have been exposed to long term forward voltage operation. After this operation an increase in forward voltage drop was observed on some of the diodes. Using cathodeluminescence, photoluminescence lifetime mapping and synchrotron white beam X-ray topography we have found that structural defects are created in the epitaxial layers during the operation. The structural defects are interpreted as stacking faults in the;CH SiC basal plane, propagating through the entire n- base layer. The stacking faults, or defects associated with these, are acting as recombination centers reducing the recombination emission intensity and the carrier lifetime in the material.

引用

页码：299 / 302

页数：4

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