Carbon/high-k trench capacitor for the 40nm DRAM generation

被引：21

作者：

Aichmayr, G. ^{[1
]}

Avellan, A. ^{[1
]}

Duesberg, G. S. ^{[1
]}

Kreupl, F. ^{[2
]}

Kudelka, S. ^{[1
]}

Liebau, M. ^{[1
]}

Orth, A. ^{[1
]}

Sanger, A. ^{[1
]}

Schumann, J. ^{[1
]}

Storbeck, O. ^{[1
]}

机构：

[1] Qimonda Dresden GmbH & Co OHG, Dresden, Germany

[2] Qimonda AG, Neubiberg, Germany

来源：

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2007年

关键词：

DRAM; capacitor; high-k and carbon;

D O I：

10.1109/VLSIT.2007.4339686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carbon is proposed as a new FEOL material with high conductivity and thermal stability for CMOS integration. Here the application of carbon-based electrodes for future DRAM cell capacitors is presented. Trench capacitors with high-k dielectrics have been realized, fulfilling the requirements for serial resistance, capacitance, leakage, reliability and temperature stability beyond the 40 nm technology node.

引用

页码：186 / +

页数：2

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