Trends in the ultimate breakdown strength of high dielectric-constant materials

被引:305
作者
McPherson, JW [1 ]
Kim, J [1 ]
Shanware, A [1 ]
Mogul, H [1 ]
Rodriguez, J [1 ]
机构
[1] Texas Instruments Inc, Dallas, TX 75243 USA
关键词
dielectric breakdown; gate dielectric; high-k gate dielectric; MOS devices; oxide; reliability; semiconductor device reliability; time-dependent dielectric breakdown (TDDB);
D O I
10.1109/TED.2003.815141
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ultimate breakdown strength E-bd of a dielectric material is found to decrease as the dielectric-constant k increases. A thermochemical description of the ultimate breakdown strength of high-k dielectrics suggests that E-bd should reduce approximately as (k)(-1/2) over a wide range of dielectric materials while the field-acceleration parameter gamma should increase in similar but inverse manner. New time-dependent dielectric breakdown (TDDB) data are presented over a wide range of dielectric materials and Ebd was found to decrease as (k)(-0.65) while gamma increases as, (k)(0.66). The good agreement between thermochemical theory and high-k TDDB observations suggests that the very high local electric field (Lorentz-relation/Mossotti-field) in high-k dielectrics tends to distort/weaken the polar molecular bonds making them more susceptible to bond breakage by standard Boltzmann processes and/or by hole-capture and thus lowers the breakdown strength.
引用
收藏
页码:1771 / 1778
页数:8
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