共 27 条
[1]
Berman A., 1981, P INT REL PHYS S IRP, P204
[2]
80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
[J].
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST,
2000,
:223-226
[3]
Cheung K. P., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P719, DOI 10.1109/IEDM.1999.824252
[4]
Degraeve R, 1996, 1996 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 34TH ANNUAL, P44, DOI 10.1109/RELPHY.1996.492060
[5]
DUMIN D, 2002, OXIDE RELIABILITY SU, V23, P1
[6]
Hauser JR, 1998, AIP CONF PROC, V449, P235
[7]
A unified gate oxide reliability model
[J].
1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL,
1999,
:47-51
[8]
MOSFET devices with polysilicon on single-layer HfO2 high-k dielectrics
[J].
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST,
2000,
:35-38
[9]
High quality ultra thin CVD HfO2 gate stack with poly-Si gate electrode
[J].
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST,
2000,
:31-34
[10]
LIDE DR, 2000, CRC HDB CHEM PHYSICS, V81, P9