Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates

被引：37

作者：

Heikman, S ^{[1
]}

Keller, S ^{[1
]}

Newman, S ^{[1
]}

Wu, Y ^{[1
]}

Moe, C ^{[1
]}

Moran, B ^{[1
]}

Schmidt, M ^{[1
]}

Mishra, UK ^{[1
]}

Speck, JS ^{[1
]}

DenBaars, SP ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Elect & Comp Engn & Mat Dept, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 12-15期

关键词：

aluminum nitride; aluminum gallium nitride; metalorganic chemical vapor deposition; epitaxial lateral overgrowth; transmission electron microscopy; threading dislocations;

D O I：

10.1143/JJAP.44.L405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fully coalesced Al0.93Ga0.07N films were demonstrated by metalorganic chemical vapor deposition on deep grooved SiC substrates. Lateral Al0.93Ga0.07N growth was achieved at low V/III ratios during growth. The deep grooves enabled coalescence despite of parasitic growth in the trenches. Dislocation reduction in the overgrown regions of the films was observed by transition electron microscopy and atomic force microscopy.

引用

页码：L405 / L407

页数：3

共 27 条

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