Synthesis of semiconductor nanowires by pulsed current electrodeposition of metal with subsequent sulfurization

被引：6

作者：

Gavrilov, S

Nosova, L

Sieber, I

Belaidi, A

Dloczik, L

Dittrich, T

机构：

[1] Hahn Meitner Inst Berlin GmbH, Abt SE 2, D-14109 Berlin, Germany

[2] Moscow Inst Elect Technol, Moscow 124498, Russia

[3] Uzbek Acad Sci, Heat Phys Dept, Tashkent 700135, Uzbekistan

[4] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 08期

关键词：

D O I：

10.1002/pssa.200461161

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Semiconductor nanowires of CdS and CuS were embedded into porous anodic alumina (PAA) by sulfurization of the metal precursors. Pores of PAA were filled with Cd and Cu by ac electrochemical preparation while the PAA layers remained on the A1-substrate. Deposited metal and semiconductor wires were characterized by scanning electron microscopy and X-ray diffraction. Photovoltage spectroscopy was applied to demonstrate semiconductor behaviour of CdS nanowires manufactured by the proposed technique. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1497 / 1501

页数：5

共 6 条

[1] Fabrication and characteristics of nanostructures on glass by A1 anodization and electrodeposition [J].