Comparison between observed and theoretically determined SEU rates in the TEXAS TMS4416 DRAMs on-board the UoSAT-2 micro-satellite

被引：4

作者：

Oldfield, MK ^{[1
]}

Underwood, CI ^{[1
]}

机构：

[1] Univ Surrey, Ctr Satellite Engn Res, Guildford GU2 5XH, Surrey, England

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 03期

关键词：

D O I：

10.1109/23.685245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single event upset (SEU) prediction tool, PRISM (Protons In Semi-conductor Materials) has been used to model the proton induced upset rate in Texas TMS4416 DRAMs on-board the UoSAT-2 micro-satellite. Good agreement is found between the observed and theoretically determined SEU and MBU (multiple-bit upset) rates for this device.

引用

页码：1590 / 1594

页数：5

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