SIMULATION OF PROTON-INDUCED ENERGY DEPOSITION IN INTEGRATED-CIRCUITS

被引：4

作者：

FERNALD, KW ^{[1
]}

KERNS, SE ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 01期

关键词：

D O I：

10.1109/23.12869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：981 / 986

页数：6

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[4] CHARGE-DEPOSITION SPECTRA IN THIN SLABS OF SILICON INDUCED BY ENERGETIC PROTONS [J].

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FARRELL, GE ;

MCNULTY, PJ .

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[5] MICRODOSIMETRIC ANALYSIS OF PROTON-INDUCED REACTIONS IN SILICON AND GALLIUM-ARSENIDE [J].

FARRELL, GE ;

MCNULTY, PJ ;

ABDELKADER, W .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1073-1077

[6] MICRODOSIMETRIC ASPECTS OF PROTON-INDUCED NUCLEAR-REACTIONS IN THIN-LAYERS OF SILICON [J].

FARRELL, GE ;

MCNULTY, PJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2012-2016

[7]

FARRELL GE, 1983, THESIS CLARKSON U

[8] CONSIDERATIONS ON RANDOM TRAVERSAL OF CONVEX BODIES AND SOLUTIONS FOR GENERAL CYLINDERS [J].

KELLERER, AM .

RADIATION RESEARCH, 1971, 47 (02) :359-&

[9]

LANGWORTHY JB, 1982, NRL4731 NAV RES LAB

[10]

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