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MICRODOSIMETRIC ASPECTS OF PROTON-INDUCED NUCLEAR-REACTIONS IN THIN-LAYERS OF SILICON

被引：35
作者：
FARRELL, GE
MCNULTY, PJ
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期
关键词：
D O I：
10.1109/TNS.1982.4336488
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：2012 / 2016
页数：5
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