MICRODOSIMETRIC ASPECTS OF PROTON-INDUCED NUCLEAR-REACTIONS IN THIN-LAYERS OF SILICON

被引：35

作者：

FARRELL, GE

MCNULTY, PJ

机构：

来源：

关键词：

D O I：

10.1109/TNS.1982.4336488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2012 / 2016

页数：5

共 24 条

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