Carbon nanotube graphoepitaxy: Highly oriented growth by faceted nanosteps

被引：124

作者：

Ismach, A ^{[1
]}

Kantorovich, D ^{[1
]}

Joselevich, E ^{[1
]}

机构：

[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2005年 / 127卷 / 33期

关键词：

D O I：

10.1021/ja052759m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Single-wall carbon nanotubes grow along self-assembled nanosteps of annealed miscut C-plane sapphire. Depending on the miscut orientation and annealing conditions, graphoepitaxy leads to the formation of either unprecedentedly straight and parallel nanotubes, with angular deviations as small as ±0.5°, or to wavy nanotubes loosely conformal to sawtooth-shaped faceted nanosteps. Copyright © 2005 American Chemical Society.

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页码：11554 / 11555

页数：2

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