A statistical parameter study of indium tin oxide thin films deposited by radio-frequency sputtering

被引：65

作者：

Jun, SI ^{[1
]}

McKnight, TE

Simpson, ML

Rack, PD

机构：

[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

[2] Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA

来源：

THIN SOLID FILMS | 2005年 / 476卷 / 01期

关键词：

indium tin oxide (ITO); sputtering; Taguchi design; transparent electrode;

D O I：

10.1016/j.tsf.2004.09.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to optimize the electrical and optical properties of indium tin oxide (ITO) thin films, a statistical analysis called Taguchi design was employed. It is shown that the sheet resistance and transmittance are inversely proportional to each other as a function of the process parameters. Additionally, the preferred orientation of crystalline ITO film is distinguishably changed with the increase of sputtering temperature and oxygen fraction (O-2/O-2+Ar) in the sputtering ambient. The change in crystallinity results from the content of incorporated oxygen, which significantly affects the electrical and optical properties of ITO films and causes a rearrangement of atoms to form preferred closed-packed plane orientation. Finally, the microstructure of the ITO films becomes denser with the increasing oxygen fraction. As a result of this work, we have successfully achieved low sheet resistance (7.0 Omega/square) and high transmittance (similar to 90%) for 300 nm thick films. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：59 / 64

页数：6

共 11 条

[1] Influence of the process parameters on structural and electrical properties of r.f. magnetron sputtering ITO films [J].

Baía, I ;

Fernandes, B ;

Nunes, P ;

Quintela, M ;

Martins, R .

THIN SOLID FILMS, 2001, 383 (1-2) :244-247

[2] Light-addressed sub-μm electrodes for extracellular recording and stimulation of excitable cells [J].

Bucher, V ;

Schubert, M ;

Kern, D ;

Nisch, W .

MICROELECTRONIC ENGINEERING, 2001, 57-8 :705-712

[3] Electrical properties of a light-addressable microelectrode chip with high electrode density for extracellular stimulation and recording of excitable cells [J].

Bucher, V ;

Brunner, B ;

Leibrock, C ;

Schubert, M ;

Nisch, W .

BIOSENSORS & BIOELECTRONICS, 2001, 16 (03) :205-210

[4] EFFECTS OF OXYGEN PARTIAL-PRESSURE ON THE MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF INDIUM TIN OXIDE FILM PREPARED BY DC MAGNETRON SPUTTERING [J].

CHOI, CG ;

NO, K ;

LEE, WJ ;

KIM, HG ;

JUNG, SO ;

LEE, WJ ;

KIM, WS ;

KIM, SJ ;

YOON, C .

THIN SOLID FILMS, 1995, 258 (1-2) :274-278

[5] TFT-LCD technology [J].

Katayama, M .

THIN SOLID FILMS, 1999, 341 (1-2) :140-147

[6] Effect of substrate temperature on the bonded states of indium tin oxide thin films deposited by plasma enhanced chemical vapor deposition [J].

Kim, YS ;

Park, YC ;

Ansari, SG ;

Lee, BS ;

Shin, HS .

THIN SOLID FILMS, 2003, 426 (1-2) :124-131

[7] Round pinholes in indium-tin-oxide thin films on the glass substrates: a Taguchi method analysis and theoretical approach to their origins [J].

Lee, HC ;

Park, OO .

VACUUM, 2004, 72 (04) :411-418

[8]

Ross P.J., 1996, TAGUCHI TECHNIQUES Q

[9]

Roy R.K., 2001, DESIGN EXPT USING TA

[10] Amorphous ITO thin films prepared by DC sputtering for electrochromic applications [J].

Teixeira, V ;

Cui, HN ;

Meng, LJ ;

Fortunato, E ;

Martins, R .

THIN SOLID FILMS, 2002, 420 :70-75

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