Influence of the process parameters on structural and electrical properties of r.f. magnetron sputtering ITO films

This paper presents results of the role of the oxygen concentration (C-O) and the deposition pressure (p(d)) on structural and electrical properties of indium tin oxide films produced by r.f, magnetron sputtering. The films were annealed in air, followed by a reannealed stage in hydrogen, aiming to improve the film's transparency and conductivity. The results achieved show that the films texture grain size, structure and compactness is more influenced by C-O than by P-d, the same does not happen with the electrical properties. (C) 2001 Elsevier Science B.V. All rights reserved.