Interface engineering for enhanced electron mobilities in W/HfO2 gate stacks

被引：31

作者：

Callegari, A ^{[1
]}

Jamison, P ^{[1
]}

Cartier, E ^{[1
]}

Zafar, S ^{[1
]}

Gusev, E ^{[1
]}

Narayanan, V ^{[1
]}

D'Emic, C ^{[1
]}

Lacey, D ^{[1
]}

Feely, FM ^{[1
]}

Jammy, R ^{[1
]}

Gribelyuk, M ^{[1
]}

Shepard, J ^{[1
]}

Andreoni, W ^{[1
]}

Curioni, A ^{[1
]}

Pignedoli, C ^{[1
]}

机构：

[1] IBM Corp, SRDC, Yorktown Hts, NY 10598 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419304

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron mobilities of W/IifO(2) stacks were found to increase monotonically with annealing temperature with little (peak) or no degradation (1MV/cm) when compared to poly-Si devices using conventional oxides. For stacks annealed at high temperature charge pumping curves indicate low interface states densities of similar to5x10(10) charges/cm(2). Mobility enhancement can also be attributed to a structural change in the HfO2 gate stack rather than due to only interfacial layer re-growth.

引用

页码：825 / 828

页数：4

共 8 条

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[2]

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[8]

ZAFAR S, 2002, GAT STACK ENG WORK G

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