A new type of dry-developed positive deep UV resist using polymer Langmuir-Blodgett films

被引：12

作者：

Guo, YZ ^{[1
]}

Feng, F ^{[1
]}

Miyashita, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Chem React Sci, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

CHEMISTRY LETTERS | 1998年 / 12期

关键词：

D O I：

10.1246/cl.1998.1269

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

It is described that poly (N-tetradecylmethacrylamide) (PTDMA) LB films can produce directly a new type of positive fine pattern by decomposing effectively with Deep UV without any development (dry-developed resist).

引用

页码：1269 / 1270

页数：2

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