Pulsed laser deposition of magnetic oxide thin films for magnetic tunneling devices

被引：6

作者：

Gomi, M ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Dept Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2001年 / 326卷 / 1-2期

关键词：

pulsed laser deposition; ferromagnetic oxides; magnetic tunneling junction; low-temperature growth; magnetoresistance;

D O I：

10.1016/S0925-8388(01)01281-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Criteria for low-temperature growth of good thin films of ferromagnetic oxides were discussed. It was shown that low-rate growth using pulsed laser deposition (PLD) at oxygen pressures lower than 1x10(-4) Torr is suitable for the low-temperature growth of oxide thin films with high crystalline quality. Thin, films of Fe A epitaxially grown under such a condition had extremely high crystalline quality along with a flat surface at the atomic scale, which were essential to magnetic tunneling junction devices. Epitaxial thin films of double perovskite Sr2FeMoO6 were also successfully grown above 500 degreesC much lower than that previously reported. These results indicate a high potential of PLD as a low-temperature growth technique. (C) 2001 Elsevier Science BY. All rights reserved.

引用

页码：221 / 225

页数：5

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