High thermoelectric efficiency in lanthanum doped Yb14MnSb11

被引：105

作者：

Toberer, Eric S. ^{[1
]}

Brown, Shawna R. ^{[2
]}

Ikeda, Teruyuki ^{[1
]}

Kauzlarich, Susan M. ^{[2
]}

Snyder, G. Jeffrey ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

[2] Univ Calif Davis, Dept Chem, Davis, CA 95616 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 06期

关键词：

D O I：

10.1063/1.2970089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lanthanum doping of the high-temperature p-type thermoelectric material Yb(14)MnSb(11) enhances the figure of merit (zT) through carrier concentration tuning. This is achieved by substituting La(3+) on the Yb(2+) site to reduce the free hole concentration as expected from the change in valence. The high-temperature transport properties (Seebeck coefficient, electrical resistivity, Hall mobility, and thermal conductivity) of Yb(13.6)La(0.4)MnSb(11) are explained by the change in carrier concentration using a simple rigid parabolic band model, similar to that found in Yb(14)Mn(1-x)Al(x)Sb(11). Together, use of these two dopant sites enables the partial decoupling of electronic and structural properties in Yb(14)MnSb(11)-based materials. (C) 2008 American Institute of Physics.

引用

页数：3

共 15 条

[1] Aspects of thin-film superlattice thermoelectric materials, devices, and applications [J].